EMC of Semiconductor Packages. RF Noise Immunity for Semiconductor Devices.

Noise in Semiconductor Devices

Noise (a spontaneous fluctuation in current or in voltage) is generated in all semiconductor devices. The intensity of these fluctuations depends on device type, its manufacturing process, and operating conditions. The resulted noise, as a superposition of different noise sources, is defined as an inherent noise. The equivalent noise models (containing all noise sources) are created for a parti...

Modified single cantilever adhesion test for EMC/PSR interface in thin semiconductor packages

Synthesis and physicochemical properties of CuMn2O4 nanoparticles; a potential semiconductor for photoelectric devices

CuMn2O4 nanoparticles, a semiconducting materials with tunable functionalities in solid oxide fuel cell, was successfully synthesized via a sol-gel method using its respective metal cations sources i.e. Cu2+ and Mn2+ in an appropriate complexing agent.The vibrational frequencies below 1000 cm-1 of the obtained materials confirmed the formation of metal-oxygen (M-O:Cu-O, Mn-O) bond in the sample...

Synthesis and physicochemical properties of CuMn2O4 nanoparticles; a potential semiconductor for photoelectric devices

CuMn2O4 nanoparticles, a semiconducting materials with tunable functionalities in solid oxide fuel cell, was successfully synthesized via a sol-gel method using its respective metal cations sources i.e. Cu2+ and Mn2+ in an appropriate complexing agent.The vibrational frequencies below 1000 cm-1 of the obtained materials confirmed the formation of metal-oxygen (M-O:Cu-O, Mn-O) bond in the sample...

A Nonfundamental Theory of Low-Frequency Noise in Semiconductor Devices

A general low-frequency noise theory based on the fluctuation in the number of carriers is presented. In this theory, the low-frequency noise is attributed to the traps within the bandgap of a semiconductor, which are the sources of the generation-recombination noise. The cumulative effect of the generation-recombination noise from each trap center generates a 1 type noise. It is shown that in ...